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2011-09-19 1 bc817k.../bc818k... npn silicon af transistor ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package bc817k-16 BC817K-16W bc817k-25 bc817k-25w bc817k-40 bc817k-40w bc818k-16w bc818k-40 6as 6as 6bs 6bs 6cs 6cs 6es 6gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c - - - - - - - - - - - - - - - - - - - - - - - - sot23 sot323 sot23 sot323 sot23 sot323 sot323 sot23
2011-09-19 2 bc817k.../bc818k... maximum ratings parameter symbol value unit collector-emitter voltage bc817... bc818... v ceo 45 25 v collector-base voltage bc817... bc818... v cbo 50 30 emitter-base voltage v ebo 5 collector current i c 500 ma peak collector current i cm 1000 base current i b 100 peak base current i bm 200 total power dissipation- t s 115 c, bc817k, bc818k t s 130 c, bc817kw, bc818kw p tot 500 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) bc817k, bc818k bc817kw, bc818kw r thjs 70 80 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-09-19 3 bc817k.../bc818k... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bc817... i c = 10 ma, i b = 0 , bc818... v (br)ceo 45 25 - - - - v collector-base breakdown voltage i c = 10 a, i e = 0 , bc817... i c = 10 a, i e = 0 , bc818... v (br)cbo 50 30 - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - v collector-base cutoff current v cb = 25 v, i e = 0 v cb = 25 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 50 a emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 ma, v ce = 1 v, h fe -grp.16 i c = 100 ma, v ce = 1 v, h fe -grp.25 i c = 100 ma, v ce = 1 v, h fe -grp.40 i c = 500 ma, v ce = 1 v, all h fe -grps. h fe 100 160 250 40 160 250 350 - 250 400 630 - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v cesat - - 0.7 v base emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v besat - - 1.2 1 pulse test: t < 300s; d < 2%
2011-09-19 4 bc817k.../bc818k... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 170 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 40 -
2011-09-19 5 bc817k.../bc818k... dc current gain h fe = ? ( i c ) v ce = 1 v h fe -grp.16 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 a i c 1 10 2 10 3 10 h fe 105 c 85 c 65 c 25 c -40 c dc current gain h fe = ? ( i c ) v ce = 1 v h fe -grp.40 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 a i c 1 10 2 10 3 10 h fe 105 c 85 c 65 c 25 c -40 c dc current gain h fe = ? ( i c ) v ce = 1 v h fe -grp.25 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 a i c 1 10 2 10 3 10 h fe 105 c 85 c 65 c 25 c -40 c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 10 ehp00223 bc 817/818 cesat v 0.4 v 0.8 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 0.2 0.6 ?c -50 25 ?c 150 ?c
2011-09-19 6 bc817k.../bc818k... base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 0 10 ehp00222 bc 817/818 besat v 2.0 v 4.0 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 1.0 3.0 ?c -50 25 ?c ?c 150 collector cutoff current i cbo = ? ( t a ) v cbo = 25 v 0 10 ehp00221 bc 817/818 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3 transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz 10 ehp00218 bc 817/818 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) bc817k, bc818k 0 2 4 6 8 10 12 14 16 v 20 vcb/veb 0 5 10 15 20 25 30 35 40 45 pf 55 ccb/ceb ccb ceb
2011-09-19 7 bc817k.../bc818k... total power dissipation p tot = ? ( t s ) bc817k, bc818k 0 15 30 45 60 75 90 105 120 150 0 50 100 150 200 250 300 350 400 450 550 total power dissipation p tot = ? ( t s ) bc817kw, bc818kw 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 350 400 450 mw 550 p tot permissible pulse load r thjs = ? ( t p ) bc817k, bc818k 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 permissible pulse load p totmax / p totdc = ? ( t p ) bc817k, bc818k 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2011-09-19 8 bc817k.../bc818k... permissible puls load r thjs = ? ( t p ) bc817kw, bc818kw 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) bc817kw, bc818kw 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2011-09-19 9 bc817k.../bc818k... package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2011-09-19 10 bc817k.../bc818k... package sot323 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 0.1 0.9 12 3 a 0.2 2 -0.05 0.65 0.65 m 3x 0.1 0.1 min. 0.1 m 0.2 a 0.2 4 2.15 1.1 8 2.3 pin 1 pin 1 2005, june date code (ym) bcr108w type code 0.6 0.8 1.6 0.65 0.65 manufacturer
2011-09-19 11 bc817k.../bc818k... edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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